Electron spin polarization and conduction band structure of doped ferromagnetic semiconductors

The spin polarization of the conduction electrons of a doped semiconductor (e.g. EuO + x%Gd) is calculated using a moment method together with an alloy analogy. It is shown to be caused by a complicated temperature- and carrier concentration-dependence of the quasiparticle spectrum of the s-f model. Obtained polarization agrees very well with recent photoemission experimental data.