EPR measurements on chromium doped GaAs,GaP and InP

EPR measurements have been made on chromium doped GaAs samples at 4.2 K. An n-type sample doped with chromium and silicon was irradiated with 2 MeV electrons to lower the Fermi level. No resonance from substitutional Cr⁺ (3d⁵) was detected, although the Cr_s²⁺ spectrum was observed. The generally accepted assignment of a spectrum to Cr_s⁺ for photoexcited samples must therefore be revised. An isotropic resonance with g = 2 is observed in p-type chromium doped GaAs, GaP and InP but it is still not clear whether this is due to Cr_s⁴⁺ or interstitial Cr_i⁺ (3d⁵).