Growth of InP/InGaAs multiple quantum well structures by chemical beam epitaxy |
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| Authors: | P. J. Skevington M. A. G. Halliwell M. H. Lyons S. J. Amin M. A. Z. Rejman-Greene G. J. Davies |
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| Affiliation: | BT Laboratories, Martlesham Heath, Ipswich IP5 7RE, UK |
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| Abstract: | InP/InGaAs multiple quantum well structures with up to 200 periods have been grown by CBE. These structures exhibit exceptional lateral uniformity, measured as ±1 Å in period, ±13 ppm in lattice mismatch and ±0.5 nm in wavelength across a 2 inch wafer. Good surface morphology, sharp interfaces and excellent growth control have all been demonstrated. |
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