Threshold pump strain for parametric amplification inn-indium antimonide |
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Authors: | R Y Thakur B K Singh R D Roy |
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Institution: | 1. Physics Department, R D & D J College, 811 201, Munger, India
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Abstract: | Phenomenological approach has been used to determine the threshold pump strain by assuming that at this strain the pump generates
an electric field for which the drift velocity of the carriers equals the sound velocity. Numerical values obtained forn-InSb have been compared with similar studies which are based on Boltzmann transport approach. |
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Keywords: | Threshold pump strain parametric amplification indium antimonide |
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