Crystallographic changes in electron pulse annealing of Ti-implanted GaP |
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| Authors: | Zbigniew Werner Marek Barlak Piotr Dłużewski René Heller Marcin Pisarek Alexey Markov |
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| Affiliation: | 1. National Centre for Nuclear Research (NCBJ), Otwock, Poland zbigniew.werner@ncbj.gov.pl;3. National Centre for Nuclear Research (NCBJ), Otwock, Poland;4. Institute of Physics of the Polish Academy of Sciences (IF PAN), Warsaw, Poland;5. Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden, Germany;6. Institute of Physical Chemistry of the Polish Academy of Sciences, Warsaw, Poland;7. Tomsk Scientific Center, Siberian Branch of the Russian Academy for Sciences (TSC SB RAS), Tomsk, Russia |
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| Abstract: | ![]()
ABSTRACT Gallium phosphide can be considered as a prospective material for impurity band solar cell (IBSC), if sufficient amount of an appropriate impurity (Ti in our case) is introduced to the material by e.g. ion implantation without distorting the crystallographic order, necessary to maintain the semiconducting properties of the host. In our experiments, the crystallographic order (damaged by ion implantation) is restored by electron pulse annealing (EPA). When the EPA process using subthreshold electron pulse energy density is studied by RBS technique, a peculiar electron-pulse induced lattice reconstruction is observed, consisting in growth of the damaged region beyond the range observed after ion implantation. This phenomenon is confirmed by transmission electron microscopy (TEM) results and interpreted in terms of melting nuclei formed around the implanted ions in a material with high sublimation pressure. |
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| Keywords: | Gallium phosphide electron pulse annealing implantation damage sublimation |
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