Atomistic simulations of elastic deformation and dislocation nucleation during nanoindentation |
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Authors: | ET Lilleodden JA Zimmerman WD Nix |
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Institution: | a Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA b Sandia National Laboratory, Livermore, CA 94551, USA c Sandia National Laboratory, Albuquerque, NM 87185, USA |
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Abstract: | Nanoindentation experiments have shown that microstructural inhomogeneities across the surface of gold thin films lead to position-dependent nanoindentation behavior Phys. Rev. B (2002), to be submitted]. The rationale for such behavior was based on the availability of dislocation sources at the grain boundary for initiating plasticity. In order to verify or refute this theory, a computational approach has been pursued. Here, a simulation study of the initial stages of indentation using the embedded atom method (EAM) is presented. First, the principles of the EAM are given, and a comparison is made between atomistic simulations and continuum models for elastic deformation. Then, the mechanism of dislocation nucleation in single crystalline gold is analyzed, and the effects of elastic anisotropy are considered. Finally, a systematic study of the indentation response in the proximity of a high angle, high sigma (low symmetry) grain boundary is presented; indentation behavior is simulated for varying indenter positions relative to the boundary. The results indicate that high angle grain boundaries are a ready source of dislocations in indentation-induced deformation. |
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Keywords: | Indentation and hardness Dislocations Atomistic Contact mechanics Grain boundaries |
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