| 多孔硅发光时间效应及物理模型 |
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| 引用本文： | 周亚训.多孔硅发光时间效应及物理模型[J].宁波大学学报(理工版),1995(4). |
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| 作者姓名： | 周亚训 |
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| 作者单位： | 宁波大学物理系 |
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| 摘 要： | 通过剖析与阳极氧化时间、大气中存放时间、激光照射时间等与时间有关的多孔硅光致发光实验现象，提出了一个既通过局域在量子线上激子态复合同时又通过一热释过程后经表面态复合的综合发光机理，它能定性地解释多孔硅发光的时间效应及其它实验结果．
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| 关 键 词： | 多孔硅，光致发光，发光强度 |
TIME EFFECT AND PHYSICAL MODEL ON LUMINESCENCE OF POROUS SILICON |
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| Zhou Yaxun.TIME EFFECT AND PHYSICAL MODEL ON LUMINESCENCE OF POROUS SILICON[J].Journal of Ningbo University(Natural Science and Engineering Edition),1995(4). |
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| Authors: | Zhou Yaxun |
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| Abstract: | aving analzed a lot of experimental phenomena of porous silicon luminescence with relevent to anodic oxidation. exposed to air and laser radiation time et al. The paper proposed a new comprehensive luminescent physical model which including quantum confinement effect and sufurce state. The new model can qualitatively explain time effect on luminesoence of porous silicon and also other luminescent experimental phenomena. |
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| Keywords: | orous silicon photolulnminescence luminosity |
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