| 非晶态半导体中的分形结构 |
| |
| 引用本文： | 林鸿溢.非晶态半导体中的分形结构[J].化学研究与应用,1991(4). |
| |
| 作者姓名： | 林鸿溢 |
| |
| 作者单位： | 北京理工大学电子工程系 北京 |
| |
| 摘 要： | 非晶态半导体硅(α-Si:H)薄膜作为新型的光电子材料,近年来备受关注,发展迅速。但其晶化机理有待深入探索。用分形理论所作的分析表明,在一定条件下,a-Si:H薄膜中形成的微结构具有分形性质。本文计算了分维值,讨论了a-Si:H薄膜结构弛豫(相变)与分形结构形成的关联,和非晶硅薄膜可能的晶化机理。并研究了在高真空中用透射电子显微镜(TEM)及动态方法跟踪观测a-Si:H薄膜原位(in situ)退火过程中发生的晶化现象,获得晶化形貌的显微图像。利用图像处理技术对显微像进行光电转换,A/D转换和数字计算,得到a-Si:H薄膜样品在不同退火条件下,显微象的Sandbox关系曲线。从而获得薄膜中形成不同分形结构的分维。文中给出应用分形理论对非晶态半导体薄膜进行分析的技术细节。
|
| 关 键 词： | 非晶态半导体 晶化 图像处理 分形结构 相变 |
FRACTAL STRUCTURE IN AMORPHOUS SEMICONDUCTOR |
| |
| Lin Hongyi.FRACTAL STRUCTURE IN AMORPHOUS SEMICONDUCTOR[J].Chemical Research and Application,1991(4). |
| |
| Authors: | Lin Hongyi |
| |
| Institution: | Lin Hongyi Department of Electronic Engineering,Beijing Institute of Technology,Beijing 100081 |
| |
| Abstract: | Crystallization of hydrogenated amorphous silicon (a-Si: H) films during in situ annealing process are investigated by transmission electron microscope (TEM). The micromorphology images of a-Si:H films are observed by use of dynamic state method. The microphotographs are transformed from optical into electrical signal by image processing technique, and A/D transform and digital calculation are also made. The Sandbox relationship graphs of sample's microphotograph are obtained under different annealing temperature. The results show that the microstructures of a-Si:H films formed under some condition are characteristic of fractal structure. The fractal dimension of the microphotographs are calculated, and relationship between the structural phase transition of the amorphous silicon film and the fractal structure are discussed. A possible crystallization mechanism of bydrogenated amorphous silicon film is suggested. |
| |
| Keywords: | Amorphous semiconductor Crystallization Image processing Fractal structure Phase transition |
| 本文献已被 CNKI 等数据库收录！ |
|
