Hot-Electron Magneto-Transport in InSb |
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| Authors: | X M WENG X L LEI |
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| Institution: | 1. Department of Physics, Suzhou University, Suzhou 215006, China;
2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, The Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | The balance equations are used to investigate the hot electron magneto-transport in narrowgap semiconductor InSb at 77 K in crossed weak magnetic field and electric field. In the case of vanishing transverse velocity, the drift mobility and the Hall mobility are calculated and it is shown that the Hall factor in InSb at 77K is less than 1 and decreases with electric field. In the case of vanishing transverse electric field, the longitudinal velocity and the transverse velocity are calculated as a function of the magnetic field and the electric field. The effect of the magnetic field on the longitudinal velocity is different from that on the transverse velocity. |
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