Minimal switching voltage for magnetization reversals in asymmetric nanorings |
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Authors: | Hui-Zhong Xu Xiao Chen Jing Hua Jun-Ming Liu |
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Affiliation: | aLaboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;bAndrew Telecommunications (China) Co. Ltd., Suzhou 215021, China;cInternational Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China |
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Abstract: | Micromagnetic simulations based on the Landau–Lifshitz–Gilbert equation are presented to study spin-polarized current induced magnetization switching in asymmetric nanoring-shaped magnetic tunnel junctions. The results show that in a nanoring with an intermediate eccentric distance S, the critical switching voltage VC reaches the minimum whose magnitude is less than half of the voltage for a symmetric nanoring. In addition to the spin-transfer torque, the current induced Ampère field is found to play a crucial part in the switching process. Analysis is given to explain the existence of such an energy valley that leads to the minimal voltage. |
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Keywords: | Spin torque Current induced magnetization switching Micromagnetic simulation |
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