氮原子、分子与团簇离子注入Si(111)的特性研究

用椭偏仪、傅氏变换红外吸收谱(FTIR)、X射线光电子能谱(XPS)以及原子力显微镜(AFM)对N⁺₁,N⁺₂,N⁺₁₀离子高剂量(1.7×10¹⁷ions/cm²)注入Si(111)的表面进行测试分析,发现三种不同尺度的离子注入后,均使Si由复折射率变化为实折射率,表面出现含氮硅键的介质层.但其表面形貌各异:N^{+关键词： 氮团簇注入 表面特性}

STUDIES ON THE FEATURE OF Si(111) SURFACE IMPLANTED BY NITROGEN ATOM,MOLECULE AND CLUSTER IONS

The measurement and analysis were carried out on the Si(111) surface implanted by N+1,N+2,N+10 cluster ions with high doses (1.7×1017ions/cm2) at 76keV energy using ellipsometry,Fourier-transform infrared (FT-IR) absorption spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy.It was found that the medium layer containing Si_N bond on the surface appeared,and their complex refractive index turned into real;however,at the same implantation dose their surface morphologies were different from each other.Expect for a few pittings,the N+1-implanted surface had a best fineness (average roughness Ra≈4.2nm), close to the unimplanted original surface.The N+2-implanted surface had a black dendritic area,and had a poorer fineness (Ra≈16nm).While in the N+10-implanted surface appeared a ripple structure,with the poorest fineness (Ra≈40nm).It was indicated that the roughness of the material surface increased with the ion size and fluence at the high energy in contrast to the cluster implantation at the low energy.