Interfacial electronic states in semiconductor heterostructures

It is shown that electronic states of a new type, with energy in the band gap can exist at a heterointerface. The interfacial states may be associated with Tamm surface states in the materials forming the heterointerface, but they can appear even if there are no surface states in the initial materials. In the plane of the heterojunction, the energy spectrum of interfacial states forms a two-dimensional band. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 6, 393–398 (25 March 1998)