| 掺碳p型GaAs和InGaAs的金属有机物分子束外延生长 |
| |
| 引用本文： | 齐鸣,白樫淳一,德光永辅,野崎真次,小长井诚,高桥清,罗晋生.掺碳p型GaAs和InGaAs的金属有机物分子束外延生长[J].物理学报,1993,42(12):1956-1962. |
| |
| 作者姓名： | 齐鸣 白樫淳一 德光永辅 野崎真次 小长井诚 高桥清 罗晋生 |
| |
| 作者单位： | (1)东京工业大学电气电子工学科,东京152,日本; (2)东京工业大学电子物理工学科,东京152,日本; (3)东京工业大学电子物理工学科,东京152,日本;西安交通大学电子工程系西安710049; (4)西安交通大学电子工程系,西安710049 |
| |
| 摘 要： | 较为系统地研究了掺碳p型GaAs和InGaAs的金属有机物分子束外延(MOMBE)生长特性和电学特性。结果表明,衬底温度和分子束强度等生长条件对于样品的生长速率、空穴浓度及In组分含量等具有较大的影响,在InGaAs的生长中这种影响更为强烈。根据对实验结果的分析,可以认为,作为分子束源之一的TMGGa(CH3)3,trimethylgallium,三甲基镓的分解状态与生长条件的相关性,是引起生长速率和空穴浓度等变化的主要因素。
关键词：
|
| 关 键 词： | P型半导体 掺碳 分子速外延 砷化镓 |
| 收稿时间： | 1993-03-10 |
MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAs |
| |
| QI MING,J. SHIRAKASHI,E. TOKUMITSU,S. NOZAKI,M. KONAGAI,K. TAKAHASHI and LUO JIN-SHENG.MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAs[J].Acta Physica Sinica,1993,42(12):1956-1962. |
| |
| Authors: | QI MING J SHIRAKASHI E TOKUMITSU S NOZAKI M KONAGAI K TAKAHASHI and LUO JIN-SHENG |
| |
| Abstract: | The growth and electrical properties of carbon doped p-type GaAs and InGaAs grown by metal-organic molecular beam epitaxy (MOMBE) using trimethylgallium (TMG), solid arsenic and solid indium as source materials have been studied systematically. The experimental results show that the growth rate and hole concentration of the samples are affected strongly by growth temperature and molecular beam fluxes,especially for InGaAs epilayers. The mechanism of carbon incorporation and its influence on the properties of the samples were also analysed based on the experimental results. It is shown that the changes in growth rate and hole concentration are mainly due to the dependence of TMG decomposition process on the growth condition. |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
