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Long-wavelength luminescence from GaSb quantum dots grown on GaAs substrates |
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| Authors: | Makoto Kudo Tomoyoshi Mishima Satoshi Iwamoto Toshihiro Nakaoka Yasuhiko Arakawa |
| Affiliation: | a Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185-8601, Japan;b Institute of Industrial Science, University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8904, Japan;c Research Center for Advanced Science and Technology, University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8904, Japan;d Nanoelectronics Collaborative Research Center, University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8904, Japan |
| Abstract: | Self-assembled GaSb quantum dots (QDs) with a photoluminescence wavelength longer than 1.3 μm were successfully grown by suppressing the replacement of As and Sb on the surface of the GaSb QDs. This result means that GaSb can thus join InAs or GaInAs as a suitable material for QD lasers for optical communications. |
| Keywords: | Author Keywords: Quantum dots Photoluminescence Molecular beam epitaxy GaSb |
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