Hole-electron mechanism of F-H pair generation in RbCl crystals with impurity electron traps |
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Authors: | E A Vasil’chenko I A Kudryavtseva A Ch Lushchik Ch B Lushchik A A Maaroos |
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Institution: | (1) Institute of Physics, Tartu University, EE 2400 Tartu, Estonia |
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Abstract: | Production of F, Cl
3
−
, Ag0, and Tl0 centers in RbCl:Ag and RbCl:Tl crystals by photons having energies ranging from 5 to 10 eV has been studied at 295 and 180
K. It is shown that creation of near-impurity excitations is accompanied by formation of F centers localized in the vicinity of Ag+ and Tl+ ions. F centers are produced in direct optical generation of self-trapped excitons. In addition to the well-known mechanism of F-H pair production in nonradiative recombination of electrons with self-trapped holes, a hole-electron process has been revealed
for the first time to operate in RbCl:Ag having deep electron traps. By this mechanism, F-H pairs appear in the following sequence of stages: thermally stimulated unfreezing of hopping diffusion of self-trapped holes
(V
K centers), tunneling electron transfer from Ag0 to the approaching V
K centers, and subsequent nonradiative decay of triplet self-trapped excitons near Ag+ ions.
Fiz. Tverd. Tela (St. Petersburg) 40, 1238–1245 (July 1998) |
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Keywords: | |
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