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Effet Kerr magnetique microonde du type Faraday dans les semiconducteurs |
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| Affiliation: | 1. Laboratoire de Physique Expérimentale, Université de Bordeaux I, 33405 Talence Cedex, France;1. School of Chemical Engineering, The University of Queensland, St Lucia 4072, Australia;2. Centre for Coal Seam Gas, The University of Queensland, St Lucia 4072, Australia;1. School of Environment and Energy, Guangdong Provincial Key Laboratory of Advanced Energy Storage Materials, South China University of Technology, Guangzhou 510640, Guangdong, China;2. College of Chemistry and Chemical Engineering, Gannan Normal University, Ganzhou 341000, Jiangxi, China;3. College of Physics and Electronic, Gannan Normal University, Ganzhou 341000, Jiangxi, China;1. School of Applied Science, Printing Technology Department, Marmara University, 34722 Goztepe, Istanbul, Turkey;2. Department of Chemistry, Faculty of Art & Science, Marmara University, 34722 Goztepe, Istanbul, Turkey |
| Abstract: | The Faraday-type magneto-microwave Kerr effect in semiconductors at weak magnetic fields has been studied in the domain where the influence of the carrier inertia is low but not negligible. After stating the expressions connecting the rotation and the ellipticity of the reflected wave to the material parameters we have applied these results to the determination of Hall mobility and shown that a precise determination of this mobility must usually be realised from both rotation and ellipticity effects.The experimental study has been achieved with a recording interferential reflecto-polarimeter. This apparatus being particularly well suited to this study has not yet been used for this kind of measurements. We have thus determined precisely the Hall mobility of various semiconductor samples at 16 GHz and at room temperature. |
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