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Optimized InAs quantum effect device structures grown by molecular beam epitaxy |
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| Authors: | K. Yoh H. Takeuchi A. Nishida M. Inoue |
| Affiliation: | a Research Center for Interface Quantum Electronics, Hokkaido University, North 13, West 8 Sapporo 060 Japan b Department of Electrical Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku Osaka 535 Japan c Hitachi VLSI Engineering Corp. Kodaira-shi, Tokyo Japan |
| Abstract: | We have investigated InAs quantum effect devices based on both antimonides and arsenides. In an InAs quantum point contact device based on antimonides (InAs/AlGaSb), we have successfully reduced the leakage currents and observed quantum effects at around 77 K by optimizing the heterostructure growth and mesa-etched split-gate approach. Strained InAs quantum dots based on arsenides (AlInAs/AlAs/InAs/InGaAs/AlInAs) were successfully fabricated by MBE growth and mesa-etching. Blue-shifted photoluminescence was obtained from millions of quantum dots with an average lateral size of approximately 2000 å square. |
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