Die Anwendung des Quantimet zur Ätzgrubendichtebestimmung an Silizium-Einkristallen

A quantitative estimation of the structure of etched silicon crystals is possible with the microscope Quantimet by a fast counting the number of particles, i.e. etch pits on {111}-planes. Boundary conditions of the measuring technique are the requisite size of the etch pits of from > 3 … 5 μm, a plane specimen surface, the correct optical magnification, threshold and acceptance width. Sources of errors due to the structure result from the overlap of etch pits at dislocation densities > 10⁴ cm⁻² which leads to an underestimation of the number of etch pits because of the reduced signal output. An overestimation is most caused by an unwished contrast in the surface which yields additional signal outputs. The errors will be eliminated by using a calibration curved. Due to the short time which is necessary for counting, the Quantimet is well suitable for routine testings and for quantitative evaluation of the structure defects (etch pit density) in silicon, including consideration of possible errors.