Growth,structure, and cathodoluminescence of Dy-doped ZnO nanowires |
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| Authors: | Y H Yang H G Zhu G W Yang |
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| Institution: | (1) College of Chemistry and Chemical Engineering, Harbin Normal University, 150025 Harbin, People’s Republic of China;(2) Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, 430074 Wuhan, People’s Republic of China; |
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| Abstract: | Dy-doped ZnO nanowires have been prepared using high-temperature and high-pressure pulsed-laser deposition. The morphology,
structure, and composition of the as-prepared nanostructures are characterized by field emission scanning electron microscopy,
X-ray diffraction, Raman scattering spectrometry, X-ray photoelectron spectrometry, transmission electron microscopy, and
energy dispersive X-ray spectroscopy. The alloying droplets are located at the top of the as-prepared Dy-doped ZnO nanowires,
which means that the growth of the Dy-doped ZnO nanowires is a typical vapor-liquid-solid process. The luminescence properties
of Dy-doped ZnO nanowires are characterized by cathodoluminescence spectra and photoluminescence spectra at low temperature
(8 K). Two peaks at 481 and 583 nm, respectively, are identified to be from the doped Dy3+ ions in the CL spectra of Dy-doped ZnO nanowires. |
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