The role of emitter quasi-bound state and scattering on intrinsic bistability in resonant tunneling diodes |
| |
Authors: | T. Sandu W. P. Kirk |
| |
Affiliation: | NanoFAB Center, University of Texas at Arlington, 500 S. Cooper Street, Arlington, TX 76012, USA |
| |
Abstract: | Usually, numerical self-consistent calculations predict a much larger intrinsic bistability region than actually is measured in resonant tunneling diodes (RTDs). In addition, numerical calculations have shown that scattering in the well reduces bistability. We used a unified treatment of current flowing from continuum states and emitter quasi-bound states to show numerically and analytically that not only the scattering in the quantum well but also the scattering in the emitter reduces bistability. Moreover, within the Hartree approximation, bistability occurs by tunneling resonantly between emitter quasi-bound state and well quasi-bound state as a pitchfork bifurcation. |
| |
Keywords: | Resonant tunneling Non-equilibrium Green's functions Intrinsic bistability Quantum well |
本文献已被 ScienceDirect 等数据库收录! |
|