| 不同金属缓冲层对GaN薄膜的光学及电学性能的影响 |
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| 引用本文： | 翟化松,余春燕,高昂,姜武,王坤鹏,许并社.不同金属缓冲层对GaN薄膜的光学及电学性能的影响[J].无机化学学报,2013,29(18). |
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| 作者姓名： | 翟化松 余春燕 高昂 姜武 王坤鹏 许并社 |
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| 作者单位： | 太原理工大学新材料界面科学与工程教育部重点实验室, 太原 030024;山西省新材料工程技术研究中心, 太原 030024;太原理工大学新材料界面科学与工程教育部重点实验室, 太原 030024;山西省新材料工程技术研究中心, 太原 030024;太原理工大学材料表面工程研究所, 太原 030024;太原理工大学材料表面工程研究所, 太原 030024;太原理工大学新材料界面科学与工程教育部重点实验室, 太原 030024;山西省新材料工程技术研究中心, 太原 030024;太原理工大学新材料界面科学与工程教育部重点实验室, 太原 030024;山西省新材料工程技术研究中心, 太原 030024 |
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| 基金项目： | 国家自然科学基金（No.51002102）；山西省科技创新重点团队项目（No.2012041011）资助项目。 |
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| 摘 要： | 本文以金属Ga和NH3为原料，Al、Ni和Fe为金属缓冲层，采用化学气相沉积法(CVD)在Si(100)衬底上合成了GaN微米薄膜。利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量弥散X射线谱(EDS)、光致发光光谱(PL)和霍尔效应测试仪(HMS-3000)等对GaN微米薄膜进行表征。结果表明，所有样品均为六方纤锌矿结构；样品均出现了很强的近带边紫外发射峰和半峰宽较大的中心波长为672nm红光发射峰；不同样品的电学性能差异较大。最后对合成的GaN微米薄膜的可能形成机理进行了简单分析。
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| 关 键 词： | GaN微米薄膜 金属缓冲层 化学气相沉积 |
Effect of Different Metal Buffer Layer on Optical and Electrical Properties of GaN Films |
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| ZHAI Hua-Song,YU Chun-Yan,GAO Ang,JIANG Wu,WANG Kun-Peng and XU Bing-She.Effect of Different Metal Buffer Layer on Optical and Electrical Properties of GaN Films[J].Chinese Journal of Inorganic Chemistry,2013,29(18). |
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| Authors: | ZHAI Hua-Song YU Chun-Yan GAO Ang JIANG Wu WANG Kun-Peng and XU Bing-She |
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| Institution: | Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024, China;Shanxi Research Center of advanced Materials Science and Technology, Taiyuan 030024, China;Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024, China;Shanxi Research Center of advanced Materials Science and Technology, Taiyuan 030024, China;Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024, China;Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024, China;Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024, China;Shanxi Research Center of advanced Materials Science and Technology, Taiyuan 030024, China;Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan 030024, China;Shanxi Research Center of advanced Materials Science and Technology, Taiyuan 030024, China |
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| Abstract: | GaNmicron films were prepared on Si(100) substrate with Al, Ni and Fe metal buffer layer by chemical vapor deposition method (CVD), in which metal Ga and NH3 as source materials. The GaNmicron films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), photoluminescence (PL) and hall effect measurement system (HMS-3000) etc. The results indicate that all samples are hexagonal wurtzite structure, show strong near-band-edge UVemission peaks and red light emission peaks with center wavelength of 672 nm. The electrical properties of samples are quite different. Finally the possible formation mechanisms of GaNmicron films were proposed. |
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| Keywords: | GaN micron films metal buffer layer chemical vapor deposition (CVD) |
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