Measurement of sputtering yields and damage in C60 SIMS depth profiling of model organic materials

Sputter‐depth profiles of model organic thin films on silicon using C₆₀ primary ions have been employed to measure sputtering yields and depth resolution parameters. We demonstrate that some materials (polylactide, Irganox 1010) have a constant and high sputtering yield, which varies linearly with the primary ion energy, whereas another material (Alq₃) has lower, fluence‐dependent sputtering yields. Analysis of multi‐layered organic thin films reveals that the depth resolution is a function of both primary ion energy and depth, and the sputtering yield depends on the history of sputtering. We also show that ～30% of repeat units are damaged in the steady‐state regime during polylactide sputtering. Crown Copyright © 2006. Reproduced with the permission of Her Majesty's Stationery Office. Published by John Wiley & Sons, Ltd.