| 高临界电流密度NbN约瑟夫森结的制备和特性表征 |
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| 引用本文： | 唐鑫,张栖瑜,王会武,王镇.高临界电流密度NbN约瑟夫森结的制备和特性表征[J].低温物理学报,2019,41(5):368-371. |
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| 作者姓名： | 唐鑫 张栖瑜 王会武 王镇 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所,上海200050;中国科学院上海微系统与信息技术研究所,上海200050;中国科学院上海微系统与信息技术研究所,上海200050;中国科学院上海微系统与信息技术研究所,上海200050 |
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| 基金项目： | 中国科学院战略性先导科技专项资助资助的课题 |
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| 摘 要： | 我们开展了高临界电流密度的NbN约瑟夫森结的制备和特性研究.利用直流磁控溅射方法在单晶MgO(100)衬底上外延生长NbN/AlN/NbN三层膜,并使用微加工工艺制备了NbN约瑟夫森隧道结,在液氦温度下对NbN约瑟夫森结的电流-电压特性进行了测量,实验结果表明,NbN约瑟夫森结具有良好的隧穿特性,其临界电流密度J_c为10 kA/cm^2,质量因子大于10,能隙是5.7 mV,这些实验结果为基于NbN结的超导数字电路研究奠定了坚实的基础.
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| 关 键 词： | 约瑟夫森结 NbN结 临界电流密度 |
Fabrication and Characterization of High Critical Current Density Epitaxial NbN/AlN/NbN Josephson Junctions |
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| TANG Xin,ZHANG Xiyu,WANG Huiwu and WANG Zhen.Fabrication and Characterization of High Critical Current Density Epitaxial NbN/AlN/NbN Josephson Junctions[J].Chinese Journal of Low Temperature Physics,2019,41(5):368-371. |
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| Authors: | TANG Xin ZHANG Xiyu WANG Huiwu and WANG Zhen |
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| Institution: | Shanghai Institute of Microsystem and Information Technology , Chinese Academy of Sciences ,Shanghai 200050,China,Shanghai Institute of Microsystem and Information Technology , Chinese Academy of Sciences ,Shanghai 200050,China,Shanghai Institute of Microsystem and Information Technology , Chinese Academy of Sciences ,Shanghai 200050,China and Shanghai Institute of Microsystem and Information Technology , Chinese Academy of Sciences ,Shanghai 200050,China |
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| Abstract: | We have developed NbN Josephsonjunctions with high critical current density. The epitaxial NbN/AlN/NbN trilayers were grown by DC magnetron sputtering on single crystal MgO(100) substrates. The NbN junctions based on these trilayers were fabricated with the micro fabrication technique. The current-voltage characteristicsof NbN Josephson junctions were measured at 4.2 K. The junctions show good tunneling properties with a large gap voltage of 5.7mV and the quality factor Rsg/RN above 10 for the junctions with a Jc of 10 kA/cm2 . These results will be useful for the development of superconducting digital circuits based on NbN junctions. |
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| Keywords: | quantumdot single |
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