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Quantum size effect in low energy electron diffraction of thin films
Institution:1. Department of Physics, Hong Kong University of Science and Technology, Kowloon, Hong Kong, PR China;2. Department of Physics, The University of Hong Kong, Hong Kong, PR China;1. Key Laboratory of Tropical Translational Medicine of Ministry of Education, School of Tropical Medicine and Laboratory Medicine, Hainan Medical University, Haikou, Hainan, 571199, China;2. State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China;3. Guangdong Provincial Key Laboratory of Advanced Welding Technology, China-Ukraine E.O.Paton Institute of Welding, Guangzhou, Guangdong, 510651, China;4. Key Laboratory of Advanced Semiconductor Devices and Materials, Xi’an University of Posts & Telecommunications, Xi’an, Shaanxi, 710121, China;1. Key Laboratory of Tropical Translational Medicine of Ministry of Education, School of Tropical Medicine and Laboratory Medicine, Hainan medical University, Haikou, Hainan 571199, China;2. Guangdong Provincial Key laboratory of Advanced Welding Technology, China-Ukraine E.O.Paton Institute of Welding, Guangzhou, Guangdong, 510651, China;3. State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, China
Abstract:Low energy electron microscopy (LEEM) is used to study the quantum size effect (QSE) in electron reflectivity from thin films. Strong QSE interference peaks are seen below 20 eV for Cu and Ag films on the W(1 1 0) surface and Sb films on the Mo(0 0 1) surface. Simple inspection of QSE interference peaks reveals that all three metals grow atomic layer-by-atomic layer. Layer-specific I(V) spectra obtained with LEEM permit structural analysis by full dynamical multiple scattering LEED calculations for a layer-by-layer view of thin film structure.
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