Chlorine adsorption on Si(1 1 1) studied by optical methods |
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| Affiliation: | 1. Department of Occupational Therapy, Faculty of Social Welfare and Health Sciences, University of Haifa, Haifa 31905, Israel;2. Pediatric Neurology Unit and the Gilbert Israeli Neurofibromatosis Center (GINFC), Dana Children''s Hospital, Tel Aviv Sourasky Medical Center, 6 Weizmann Street, Tel Aviv 64239, Israel;1. State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, China;2. Microsystem & Terahertz Research Center, China Academy of Engineering Physics (CAEP), Chengdu 610200, China;1. Natural Product Informatics Research Center, Korea Institute of Science and Technology (KIST) Gangneung Institute, Gangneung 25451, Republic of Korea;2. Department of Plant Biotechnology, College of Life Sciences and Biotechnology, Korea University, Seoul 02841, Republic of Korea;3. Institute of Pharmaceutical Research and Development, College of Pharmacy, Wonkwang University, Iksan 54538, Republic of Korea;4. Herbal Medicine Resources Research Center, Korea Institute of Oriental Medicine, Naju 58245, Republic of Korea;5. Natural Products Research Institute, College of Pharmacy, Seoul National University, Seoul 08826, Republic of Korea;6. State Key Laboratory of Medicinal Chemical Biology, College of Pharmacy, and Tianjin Key Laboratory of Molecular Drug Research, Nankai University, Tianjin 300071, People’s Republic of China;7. Korean Agricultural Culture Collection, National Institute of Agricultural Science, Wanju 55365, Republic of Korea;8. Korea Polar Research Institute, Korea Ocean Research and Development Institute, Incheon 21990, Republic of Korea;1. Faculty of Maritime and Transportation, Ningbo University, Ningbo 315211, PR China;2. Department of Energy Sciences, Lund University, Lund 22100, Sweden |
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| Abstract: | The adsorption process of chlorine on Si(1 1 1) has been studied by means of real time surface differential reflectance (SDR) spectroscopy and second harmonic generation (SHG). The structure observed at 3.6 eV in SDR spectra is attributed to transitions including Si–Cl antibonding states. However, the overall feature is due to the removal of the electronic states of the clean surface. Developments of adsorption on Si adatom dangling bonds and breaking of adatom back bonds are obtained from SDR spectra and second harmonic (SH) intensity. They are well fit by the solutions of the rate equations under the assumption of adsorption of atoms without migration, and the initial sticking probability on the dangling bonds and the initial breaking probability of the back bonds are determined. Dependence of the adsorption kinetics on the carrier concentration is briefly reported. |
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