Growth and characterization of CoSi2 films on Si (1 0 0) substrates |
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| Institution: | 1. Università degli Studi di Genova, Dipartimento di Chimica e Chimica Industriale (DCCI), Via Dodecaneso 31, 16146 Genova, Italy;2. Università degli Studi di Genova, Dipartimento di Ingegneria Civile, Chimica e Ambientale (DICCA), Piazzale Kennedy 1, 16129 Genova, Italy;3. Departamento de Química Inorgánica, Cristalografía y Mineralogía, Facultad de Ciencias, Universidad de Málaga, Campus de Teatinos, 29071 Málaga, Spain;1. Department of Chemistry, School of Physical Sciences, Mizoram University, Aizawl 796004 (India);2. Department of Health and Environment, Kwandong University, Gangneung 210-701 (Korea);3. Department of Environmental Engineering, Kwangwoon University, Seoul 139-701 (Korea);1. Department of Chemical, Metallurgical and Materials Engineering, Tshwane University of Technology, Pretoria, South Africa;2. Department of Metallurgical and Materials Engineering, Ahmadu Bello University, Zaria, Nigeria;3. Department of Mechanical Engineering, Covenant University, Ota, Nigeria;1. Key Laboratory of Solid Waste Treatment and Resource Recycle (SWUST, Ministry of Education), Mianyang 621010, PR China;2. Sichuan Science Cobalt Source Co. Ltd, Mianyang 621900, PR China |
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| Abstract: | In the present work, a special solid phase epitaxy method has been adapted for the preparation of CoSi2 film. This method includes an epitaxial growth of Co films on Si (1 0 0) substrate, and in situ annealing of the Co/Si films in vacuum. It has been found that at the substrate temperature of 360°C, fcc cobalt film grows epitaxially on the Si (1 0 0) surface. The crystallographic orientation relations between fcc Co film and Si substrate determined from the electron diffraction result are: (0 0 1) Co//(0 0 1) Si, 1 0 0] Co//1 1 0]Si. Upon annealing at temperatures range from 500 to 600°C, Co film reacts with Si substrate and transforms into CoSi2. The CoSi2 films prepared by this way are characterized by XTEM, XPS and AFM. |
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