Initial stage of CdTe on Si(1 0 0) grown by MBE |
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| Institution: | 1. Department of Chemical Engineering, The Pennsylvania State University, University Park, PA 16802, United States;2. Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, United States;1. Academy of Scientific and Innovative Research (AcSIR), CSIR-IITR, MG Marg, Lucknow 226001, India;2. Analytical Chemistry Laboratory, Regulatory Toxicology Group, CSIR-IITR, MG Marg, Lucknow 226001, India;3. Department of Applied Chemistry, Babasaheb Bhimrao Ambedkar University, Vidya Vihar, Raibareli Road, Lucknow, 226025, India;4. SEM facility, CSIR-IITR, MG Marg, Lucknow 226001, India;1. Dutch Institute for Fundamental Energy Research (DIFFER), P.O. Box 6336, 5600 HH Eindhoven, The Netherlands;2. Department of Applied Physics, Eindhoven University of Technology (TU/e), P.O. Box 513, 5600 MB Eindhoven, The Netherlands |
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| Abstract: | The initial stage of CdTe growth on silicon has been investigated using angle-resolved photoemission and scanning tunneling microscopy (STM). In order to study initial stage of CdTe on Si, we have desorbed CdTe by annealing at 600 °C so that only one monolayer of Te remains on the Si(1 0 0) substrate. Te/Si(1 0 0)2×1 superstructure has been observed by LEED. Photoemission spectra indicate that Te atoms bond with the Si dangling bond. Atomically resolved STM images reveal that the Te atoms form dimers. It is observed that buckling direction of Te-dimer changes and the dimmers are broken in the site of some dimmer rows. It can be explained that the large lattice mismatch cause the switching of the buckling direction and the breaking of Te-dimer resulted surface relaxation. |
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