Effects of growth rate and buffer-layer on Bi2Sr2CaCu2Oy thin film fabrication |
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| Institution: | 1. Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, Jiangsu, 210096, People''s Republic of China;2. College of Physics Science & Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, Laboratory of Optoelectronic Materials & Detection Technology, Guangxi University, Nanning, 530004, People''s Republic of China;1. Department of Materials Physics and Chemistry, School of Materials Science and Engineering & State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, PR China;2. Key Laboratory for Anisotropy and Texture of Materials, Ministry of Education, Northeastern University, Shenyang 110819, PR China;3. Department of Biophysics, School of Fundamental Sciences, China Medical University, Shenyang, Liaoning 110122, PR China;4. State Key Laboratory of Heavy Oil Processing, Beijing Key Laboratory of Failure, Corrosion, and Protection of Oil/Gas Facilities, China University of Petroleum Beijing, Beijing 102249, PR China;1. Université de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy, F-54042, France;2. CNRS, Institut Jean Lamour, UMR CNRS 7198, NANCY, F-54042, France;1. Slovak University of Technology, Bratislava, Slovakia;2. Ilmenau University of Technology, Ilmenau, Germany;1. Jiangxi Key Laboratory of Surface Engineering, Jiangxi Science and Technology Normal University, Nanchang 330013, PR China;2. School of Materials and Mechanical & Electrical Engineering, Jiangxi Science and Technology Normal University, Nanchang 330013, PR China;3. Department of Chemistry, Nanchang University, Nanchang 330013, PR China |
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| Abstract: | The effect of the growth rate on the Bi2Sr2CaCu2Oy (Bi2212) thin film quality on MgO substrate is investigated at several growth rates from 0.175 to 3 nm/min. The maximal step height on the film surface is improved from about 100 to 6 nm by the reduction of growth rate to 0.5 nm/min and simultaneously the superconducting critical temperature attaining to a zero resistance Tc(R=0), is also improved from 50 to 63 K. The surface morphologies of the upmost Bi-superconducting thin films with the intermediate layers on MgO substrate is also studied in contrast to that deposited directly on the MgO substrate. |
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