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Properties of (InGa)As/GaAs QW (λ ≈ 1.2 µm) facet-coated edge emitting diode laser |
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| Authors: | T Gühne V Gottschalch G Leibiger H Herrnberger J Kovác J Kovác Jr R Schmidt-Grund B Rheinländer D Pudis |
| Institution: | (1) Institute of Inorganic Chemistry, Semiconductor Chemistry group, University of Lepzig, Linnéstrasse 3, 04103 Leipzig, Germany;(2) Department of Microelectronics, Slovak Technical University, Ilkovicova 3, SK 81219 Bratislava, Slovakia;(3) International Laser Center, Ilkovicova 3, SK 81219 Bratislava, Slovakia;(4) Institute of Experimental Physics II, Semiconductor Physics group, University of Leipzig, Linnéstrasse 3, 04103 Leipzig, Germany;(5) Department of Physics, University of Žilina, Vel’ky diel, SK 01026 Žilina, Slovakia |
| Abstract: | In this paper, we report on the design and optical properties of laser diodes with an emission wave-length of ～1170 nm based on an (InGa)As/GaAs double quantum well active layer. The back and front facet of the laser diodes were coated with SiOx dielectric films that influence the output optical power by enhancing or lowering the facet reflectivity. The measurements show improvement of the facet-coated laser diode properties in the threshold-current-density reduction along with light output power enhancement. Furthermore, a narrow far field pattern and high side mode suppression have been observed. |
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