Effect of thermal-annealing on the magnetoresistance of manganite-based junctions |
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| Authors: | Xie Yan-Wu Shen Bao-Gen and Sun Ji-Rong |
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| Institution: | State Key Laboratory for Magnetism, Institute of Physics,
Chinese Academy of Sciences, Beijing 100190, China; State Key Laboratory of Metastable Materials
Science and Technology, Yanshan
University, Qinhuangdao 066004, China;State Key Laboratory for Magnetism, Beijing National
Laboratory for Condensed Matter Physics, Institute of Physics,
Chinese Academy of Scie |
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| Abstract: | Thermal-annealing has been widely used in modulating the oxygen
content of manganites. In this work, we have studied the effect of
annealing on the transport properties and magnetoresistance of
junctions composed of a La0.9Ca0.1MnO3 + \delta film
and a Nb-doped SrTiO3 substrate. We have demonstrated that the
magnetoresistance of junctions is strongly dependent on the
annealing conditions: From the junction annealed-in-air to the
junction annealed-in-vacuum, the magnetoresistance near 0-V bias can
vary from \sim --60% to \sim 0. A possible mechanism
accounting for this phenomenon is discussed. |
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| Keywords: | manganite magnetoresistance manganite junction annealing |
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