Stimulated electronic Raman scattering in In vapor |
| |
| Authors: | Y Takubo M Tsuchiya M Shimazu |
| |
| Institution: | (1) Groupe de Physique et Applications des Semiconducteurs (PHASE), Centre de Recherches Nucléaires, F-67037 Strasbourg Cedex, France |
| |
| Abstract: | High power density electron beams offer new opportunities for studies of epitaxial growth of semiconductor materials. Assuming
that the mechanism of epitaxial growth can be understood as a surface melting followed by supercooling regrowth, the heat
flow equation has been applied to calculate the temperature reached after an electron beam pulse of power density between
0.5–2 J/cm2. Comparison with laser annealing is made. |
| |
| Keywords: | 61 80 78 30 85 30 |
| 本文献已被 SpringerLink 等数据库收录！ |
