| 氢化硅薄膜光吸收近似特性研究 |
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| 引用本文： | 郭立强,丁建宁,杨继昌,王书博,叶枫,程广贵,凌智勇,范慧娟,袁宁一,王秀琴.氢化硅薄膜光吸收近似特性研究[J].物理学报,2010,59(11):8184-8190. |
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| 作者姓名： | 郭立强 丁建宁 杨继昌 王书博 叶枫 程广贵 凌智勇 范慧娟 袁宁一 王秀琴 |
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| 作者单位： | (1)常州大学,低维材料微纳器件与系统研究中心,常州 213164; (2)常州大学,低维材料微纳器件与系统研究中心,常州 213164;常州市新能源重点实验室,常州 213164; (3)江苏大学机械工程学院,微纳米研究中心,镇江 212013; (4)江苏大学机械工程学院,微纳米研究中心,镇江 212013;常州大学,低维材料微纳器件与系统研究中心,常州 213164;常州市新能源重点实验室,常州 213164 |
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| 基金项目： | 青蓝工程(批准号:2008-04),常州市工业科技攻关专项(批准号:CE2008014),常州市科技平台专项(批准号:CM2008301)和江苏省科技支撑计划(批准号:BE20080030)资助的课题. |
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| 摘 要： | 利用等离子体化学气相沉积系统在直流电压源和射频源的双重激励下，以康宁7059玻璃为衬底制备了氢化硅薄膜．过测定氢化硅薄膜Raman光谱，对薄膜微结构进行了表征；建立氢化硅薄膜的光吸收模型，计算出薄膜的光吸收系数和光学带隙，和实验结果基本一致，说明该模型符合实验结果；并利用该模型计算的光吸收系数和光学带隙，结合AMPS软件对设计的太阳电池结构进行了模拟，给出的I-V特性曲线变化趋势与实验结果基本符合，同时对实验结果与模拟结果存在差异的原因进行了分析，并给出合理解释．
关键词：
氢化硅薄膜
光吸收系数
光吸收模型
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| 关 键 词： | 氢化硅薄膜 光吸收系数 光吸收模型 |
| 收稿时间： | 2009-12-22 |
Photo-absorption coefficient approximation of hydrogenated silicon films |
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| Guo Li-Qiang,Ding Jian-Ning,Yang Ji-Chang,Wang Shu-Bo,Ye Feng,Cheng Guang-Gui,Ling Zhi-Yong,Fan Hui-Juan,Yuan Ning-Yi,Wang Xiu-Qin.Photo-absorption coefficient approximation of hydrogenated silicon films[J].Acta Physica Sinica,2010,59(11):8184-8190. |
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| Authors: | Guo Li-Qiang Ding Jian-Ning Yang Ji-Chang Wang Shu-Bo Ye Feng Cheng Guang-Gui Ling Zhi-Yong Fan Hui-Juan Yuan Ning-Yi Wang Xiu-Qin |
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| Institution: | Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013, China;Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013, China; Low-dimension Material Micro/Nano Device and System Center, Changzhou University, Changzhou 213164, China;Key Laboratory of New Energy Engineering, Changzhou 213164, Ch;Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013, China;Low-dimension Material Micro/Nano Device and System Center, Changzhou University, Changzhou 213164, China;Low-dimension Material Micro/Nano Device and System Center, Changzhou University, Changzhou 213164, China;Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013, China;Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013, China;Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013, China;Low-dimension Material Micro/Nano Device and System Center, Changzhou University, Changzhou 213164, China;Key Laboratory of New Energy Engineering, Changzhou 213164, China;Low-dimension Material Micro/Nano Device and System Center, Changzhou University, Changzhou 213164, China |
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| Abstract: | Hydrogenated silicon films are prepared on Corning 7059 glass by the plasma enhanced chemical vapour deposition technique with radio frequency ( RF),power,(13.56 MHz) and DC bias. The microstructures of hydrogenated silicon films investigated by Raman spectra. The photo-absorption coefficient is calculated by utilizing an established photo-absorption model. The I-V characteristics of hydrogenated silicon film solar cells are simulated by using software AMPS. The results show that photo-absorption coefficient curves and I-V curves are both consistent well with experimental data. At the same time, the difference between experimental results are calculated results were analyzed. |
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| Keywords: | hydrogenated silicon films photo-absorption coefficients photo-absorption model |
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