Role of electronic excitation in the amorphization of Ge-Sb-Te alloys |
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Authors: | Li Xian-Bin Liu X Q Liu Xin Han Dong Zhang Z Han X D Sun Hong-Bo Zhang S B |
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Institution: | State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China. |
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Abstract: | First-principles molecular dynamics simulation reveals the effects of electronic excitation in the amorphization of Ge-Sb-Te. The excitation makes the phase change an element-selective process, lowers the critical amorphization temperature considerably, for example, to below 700?K at a 9% excitation, and reduces the atomic diffusion coefficient with respect to that of melt by at least 1 order of magnitude. Noticeably, the resulting structure has fewer wrong bonds and significantly increased phase-change reversibility. Our results point to a new direction in manipulating ultrafast phase-change processes with improved controllability. |
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