X-ray converters for radiation treatment of thin films

The energy absorbed in thin films of selected materials bombarded by x rays emitted in the braking of low-energy electrons (E ₀<500 keV) in converters with various atomic numbers (Z=29–73) is calculated by the Monte Carlo method. The program takes into account both of the K-shell ionization mechanisms that lead to emission of characteristic photons as a result of electron impact and as a result of the photoelectric effect, and the characteristic radiation is shown to make a large contribution to the absorbed energy in thin films. Calculations show that the proper choice of material and thickness of the converter affords a two-to fivefold increase in the energy of the x radiation absorbed in thin films of semiconductor materials. Zh. Tekh. Fiz. 68, 99–101 (November 1998)