| Abstract: | ![]()
Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga1–x Mnx Sb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga1–x Mnx Sb samples show only GaSb‐like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x‐ray (EDX) experiments, the compositional dependence of GaSb‐like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga1–x Mnx Sb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb‐like phonon modes are suggested by reduced‐mass model. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
