Crystal growth of zirconium‐doped KTiOPO4 crystals in the K2O‐P2O5‐TiO2‐ZrF4 system

Zirconium‐doped KTiOPO₄ (KTP) crystals were grown using a high temperature flux method in the K₂O‐P₂O₅‐TiO₂‐ZrF₄ system. The dopant content in the single crystals with general composition KTi_1‐xZr_xOPO₄ (where x = 0 – 0.026) strongly depends on zirconium concentration in the homogeneous melts. AES‐ICP method and X‐ray fluorescence analysis were used to determine the composition of the obtained crystals. Phase analyses of the products were performed using the powder XRD. The structures of KTiOPO₄ containing different quantities of Zr were refined on the basis of single crystal XRD data. Applying ZrF₄ precursor for zirconium injection into the flux allowed growing the zirconium‐doped KTP crystals at 930–750°C. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)