Method of uniform effective field in structure-dynamic approach of nanoionics

In the structure-dynamic approach of nanoionics, the method of a uniform effective field ( {F}_{mathrm{eff}}^{j,k} ) of a crystallographic planeX ^j has been substantiated for solid electrolyte nanostructures. The ( {F}_{mathrm{eff}}^{j,k} )is defined as an approximation of a non-uniform field ( {F}_{mathrm{dis}}^j )of X ^j with a discrete- random distribution of excess point charges. The parameters of ( {F}_{mathrm{eff}}^{j,k} )are calculated by correction of the uniform Gauss field ( {F}_{mathrm{G}}^j ) of X ^j . The change in an average frequency of ionic jumps X ^k ?→?X ^k?+?1 between adjacent planes of nanostructure is determined by the sum of field additives to the barrier heights η _k , _k?+?1, and for ( {F}_{mathrm{G}}^j ) and ( {F}_{mathrm{dis}}^j ), these sums are the same decimal order of magnitude. For nanostructures with length ~4 nm, the application of ( {F}_{mathrm{G}}^j ) (as ( {F}_{mathrm{eff}}^{j,k} )) gives the accuracy ~20 % in calculations of ion transport characteristics. The computer explorations of the “universal” dynamic response (Reσ ^??∝?ω ⁿ ) show an approximately the same power n < ≈1 for( {F}_{mathrm{G}}^j ) and ( {F}_{mathrm{eff}}^{j,k} ).