| Effects of Crossed Electric and Magnetic Fields on Shallow Donor Impurity Binding Energy in a Parabolic Quantum Well |
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| 引用本文： | E.Kasapoglu H.Sari I.Soekmen. Effects of Crossed Electric and Magnetic Fields on Shallow Donor Impurity Binding Energy in a Parabolic Quantum Well[J]. 中国物理快报, 2004, 21(12): 2500-2503 |
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| 作者姓名： | E.Kasapoglu H.Sari I.Soekmen |
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| 作者单位： | [1]DepartmentofPhysics,CumhuriyetUniversity,58140Sivas,Turkey [2]DepartmentofPhysics,DokuzEylülUniversity,Izmir,Turkey |
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| 摘 要： | We have calculated variationally the ground state binding energy of a hydrogenic donor impurity in a parabolic quantum well in the presence of crossed electric and magnetic fields. These homogeneous crossed fields are such that the magnetic field is parallel to the heterostructure layers and the electric field is applied perpendicular to the magnetic field. The dependence of the donor impurity binding energy to the well width and the strength of the electric and magnetic fields are discussed. We hope that the obtained results will provide important improvements in device applications, especially for a suitable choice of both fields in the narrow well widths.
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| 关 键 词： | 电磁场 交叉效应 量子井抛物线 弱施主给予体 结合能 |
Effects of Crossed Electric and Magnetic Fields on Shallow Donor Impurity Binding Energy in a Parabolic Quantum Well |
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| E. Kasapoglu,H. Sari,I.S,ouml,kmen. Effects of Crossed Electric and Magnetic Fields on Shallow Donor Impurity Binding Energy in a Parabolic Quantum Well[J]. Chinese Physics Letters, 2004, 21(12): 2500-2503 |
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| Authors: | E. Kasapoglu H. Sari I.Sö kmen |
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| Affiliation: | Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey Department of Physics, Dokuz Eylül University, Izmir, Turkey |
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| Abstract: | We have calculated variationally the ground state binding energy of a hydrogenic donor impurity in a parabolic quantum well in the presence of crossed electric and magnetic fields. These homogeneous crossed fields are such that the magnetic field is parallel to the heterostructure layers and the electric field is applied perpendicular to the magnetic field. The dependence of the donor impurity binding energy to the well width and the strength of the electric and magnetic fields are discussed. We hope that the obtained results will provide important improvements in device applications, especially for a suitable choice of both fields in the narrow well widths. |
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| Keywords: | 71.55.Eq 71.55.-i 73.20.Dx |
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