Subband transitions in AlxGa1−xN /GaN/ AlxGa1−xN and AlxGa1−xN /InN/ AlxGa1−xN single quantum wells |
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| Institution: | 1. Research Center in Industrial Technologies CRTI, P.O. Box 64, Cheraga, Algiers, 16014, Algeria;2. Thin Films Development and Applications Unit UDCMA, Setif 19000, Algeria;3. Laboratory of Metallic and Semiconductor Materials, University of Biskra, P.B.145, Biskra, Algeria;4. Batna University, Physics Department, Batna, Algeria;5. DIIES - University of Reggio Calabria, Loc. Feo di Vito, Reggio Calabria 89100, Italy;1. New Technologies Research Centre, Amirkabir University of Technology, PO Box 1591633311, Tehran, Iran;2. Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, Vic. 3122, Australia;3. Department of Chemistry, Eastern Mediterranean University, Gazimagusa, TRNC via Mersin 10, Turkey;4. Institute of Biomaterials and Biomechanics, Riga Technical University, Azenes 14-201, Riga LV-1048, Latvia;1. Ioffe Institute, 26 Politekhnicheskaya, St. Petersburg 194021, Russian Federation;2. St. Petersburg State Electrotechnical University LETI, St. Petersburg 197022, Russian Federation;1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;2. University of Chinese Academy of Sciences, Beijing 100039, China |
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| Abstract: | We have calculated the spectral regime of subband transitions in AlxGa1−xN/GaN and AlxGa1−xN/InN single quantum wells. We used a simplified model to account for the internal electric fields, which modify the shape of the quantum well. Some of the parameters for these materials have not yet been firmly established. Therefore, we carried out the analysis for the extremes of the reported values of conduction band discontinuities and band gaps (in the case of InN). This analysis shows that the spectral regime of interband transitions for 1–4 nm thick wells has wavelengths above 0.5 μm for AlGaN/InN and above 0.8 μm for AlGaN/GaN and both heterostructures cover several μm wavelengths. The spectral variation with alloy composition is less pronounced in the AlxGa1−xN/InN single quantum wells due to the higher electric field present across the InN quantum well as compared to GaN. The results of these calculations are in good agreement with more rigorous theoretical approaches and available experimental values for AlxGa1−xN/GaN. |
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