Domain boundary instability in weakly coupled GaAs/AlGaAs superlattices |
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| Affiliation: | 1. P.N. Lebedev Physical Institute of Russian Academy of Sciences, Russian Federation;2. A.F. Ioffe Physico-Technical Institute, Russian Federation;1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, South Korea;2. Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, South Korea;3. Department of Physics, Yonsei University, Seoul 120-749, South Korea;1. Instituto de Ciencia de Materiales de Madrid, Teorı́a de la Materia Condensada Campus de Cantoblanco, CSIC, Cantoblanco, Madrid E-28049, Spain;2. Department of Physics, University of Texas at Austin, Austin, TX 78712, USA |
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| Abstract: | ![]()
Self-sustained oscillations of the current with a frequency ranging from 0.7 to 3.6 MHz have been detected in weakly coupled GaAs/AlGaAs superlattice at 4.2 K. A study of the static and dynamic characteristics of the structure showed that the spontaneous oscillations arise in the local region of the superlattice, restricted by a size of the domain boundary expansion. The oscillations arise in the negative differential conductivity regions due to the periodic coupling and decoupling of subbands in adjacent quantum wells, forming the expanded domain boundary. We suggest that the spatio-temporal oscillations of the domain boundary should be considered as oscillations of an ensemble of several strongly phase-coupled oscillators. Each oscillator is a couple of two adjacent quantum wells, which operates as a single resonant tunneling diode. |
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