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Potential gradient along semiconductor-surface projections in an external electric field
Authors:A. I. Spitsyn  V. M. Vantsan
Abstract:
The potential gradient is calculated as a function of the external magnetic field for a semiconductor surface in the form spatially periodic rectangular projections and indentations. Cases of projections that are much larger than and comparable with the electric-field shielding length are examined. it is shown that the functions have a maximum, whose magnitude and location are determined by the relationship between the electron and hole concentration and the surface profile and the relationship between the projection dimensions and the electric-field shielding length.Kharkov Institute of Radio Electronics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 36, No. 11, pp. 985–994, November, 1993.
Keywords:
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