Charged particle activation analysis of boron and carbon on the surface of silicon wafer期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Charged particle activation analysis of boron and carbon on the surface of silicon wafer

Authors:	S. Kataoka Y. Tarumi H. Yagi S. Tomiyoshi T. Nozaki

Affiliation:	(1) S.H.J. Examination & Inspection, Ltd., 1501, Imazaike, 799-13 Toyo, Ehime, Japan;(2) Ehime University, Bunkyo, 790 Matsuyama, Ehime, Japan;(3) Laboratory for Materials Science and Technology, Waseda University, Nishi-waseda, Shinjuku, 169 Tokyo, Japan

Abstract:	Boron and carbon on the surface of silicon wafers in ordinary atmospheres were measured by activation with the¹⁰B(d,n)¹¹C and¹²Cd(d,n)¹³N reaction, respectively. Two sample plates in intimate contact were bombarded by deuterons, and the¹¹C or¹³N formed at the inside surfaces were measured after chemical separation. From 1.2·10¹³ to 8.4·10¹³ atoms/cm² of boron and from 2.4·10¹⁴ to 6.1·10¹⁵ atoms/cm² of carbon were found ,and the sensitivity was extended down to 5·10¹² and 3·10¹² atoms/cm² for boron and carbon, respectively.

Keywords:
本文献已被 SpringerLink 等数据库收录！