Sol-Gel Derived Ferroelectric Thin Films: Avenues for Control of Microstructural and Electric Properties |
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| Authors: | Vorotilov KA Yanovskaya MI Turevskaya EP Sigov AS |
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| Institution: | (1) Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), 78 Vernadsky prosp., 117454 Moscow, Russia;(2) Karpov Institute of Physical Chemistry, 10 Vorontsovo pole, 103064 Moscow, Russia;(3) Department of Chemistry, Moscow State University, 119899 Moscow, Russia |
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| Abstract: | The paper presents short review of the works performed during the last few years in the field of the alkoxy-derived ferroelectric films. PZT films were prepared using titanium and zirconium alkoxides and Pb(CH3COO)2· 2H2O as precursors. Different way of lead acetate dehydration and the impact of lead excess in the precursor solutions on the properties of the PZT films are discussed. Trimetallic alkoxide systems Bi(OR)3-Ta(OR)5-ROH (R = Me, Et or i Pr) were studied as precursors for preparation of SrBi2Ta2O9 films. Films prepared from these solutions and annealed at the temperature between 700 and 750°C demonstrated the remanent polarization Pr* – P^
r = 7–9  C/cm2. Ba1-xSrxTiO3 films we applied from modified alkoxide solutions. Decomposition of the organic phase in the course of thermal treatment of the films is studied by IR-spectroscopy. The dependence of the dielectric permittivity of the films via the annealing temperature is reported. Preparation of LiNbO3, SrZr0.2Ti0.8O3, Zr0.8Sn0.2TiO4 is briefly discussed. |
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| Keywords: | films ferroelectrics precursors alkoxides |
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