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Low energy ion-beam post hydrogenation of phosphor implanted amorphous silicon films |
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| Authors: | R Galloni M Ruth A Desalvo YS Tsuo |
| Institution: | a CNR, Ist LAMEL, 40126, Bologna, Italy b Dipartimento di Chimica Applicata e Scienza dei Materiali, Fac. Ingegneria, Univ. Bologna, 40136, Bologna, Italy c Solar Energy Research Institute, Golden, CO 80401, USA |
| Abstract: | Glow-discharge-deposited intrinsic hydrogenated amorphous silicon films have been doped by P+ implantation in varying doses between 1016 and 2 × 1021 atoms/cm3 and annealed at 260°C. Subsequent hydrogenation of the samples produces a decrease in conductivity explained by a hydrogen-induced decrease of the electrically active fraction of the dopant. |
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