Nanosecond laser ablation and deposition of silicon |
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| Authors: | Wee Ong Siew Seong Shan Yap Cécile Ladam Øystein Dahl Turid Worren Reenaas Teck Yong Tou |
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| Affiliation: | (1) National Laboratories of Frascati, INFN, via E. Fermi 40, 00044 Frascati, Italy;(2) Physics Department and INFN, University of Salento, Via Arnesano, 73100 Lecce, Italy;(3) c/o Dipartimento di Ingegneria dell’Innovazione, NNL, National Nanotechnology Laboratory of Istituto Nazionale di Fisica della Materia (INFM), Via Arnesano, 73100 Lecce, Italy;(4) Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology – Hellas (FORTH), P.O. Box 1527, Heraklion, 71110, Crete, Greece |
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| Abstract: | Nanosecond-pulsed KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) lasers were used to ablate a polycrystalline Si target in a background pressure of <10−4 Pa. Si films were deposited on Si and GaAs substrates at room temperature. The surface morphology of the films was characterized using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Round droplets from 20 nm to 5 μm were detected on the deposited films. Raman Spectroscopy indicated that the micron-sized droplets were crystalline and the films were amorphous. The dependence of the properties of the films on laser wavelengths and fluence is discussed. |
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