Quantum transport in topological semimetals under magnetic fields (II) |
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Authors: | Sun Hai-Peng Lu Hai-Zhou |
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Institution: | 1.CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China ;2.Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing, 100872, China ;3.University of Chinese Academy of Sciences, Beijing, 100049, China ; |
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Abstract: | Research about two-dimensional (2D) materials is growing exponentially across various scientific and engineering disciplines due to the wealth of unusual physical phenomena that occur when charge transport is confined to a plane. The applications of 2D materials are highly affected by the electrical properties of these materials, including current distribution, surface potential, dielectric response, conductivity, permittivity, and piezoelectric response. Hence, it is very crucial to characterize these properties at the nanoscale. The Atomic Force Microscopy (AFM)-based techniques are powerful tools that can simultaneously characterize morphology and electrical properties of 2D materials with high spatial resolution, thus being more and more extensively used in this research field. Here, the principles of these AFM techniques are reviewed in detail. After that, their representative applications are further demonstrated in the local characterization of various 2D materials’ electrical properties. |
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