Numerical modeling of crystal growth under strong magnetic fields: An application to the travelling heater method

The article presents a 3-D numerical simulation study for the growth of single crystal semiconductors under strong magnetic fields. In such high fields, the magnetic body force components, which also depend on the flow velocity components present numerical challenges particularly in terms of convergence of iterations. To remedy such difficulties, a novel numerical approach was introduced in an in-house 3-D finite volume-based computer code. As an application, the Travelling Heater Method (THM) was selected for the growth of CdTe crystals under a static vertical magnetic field.