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Free standing modulation doped core–shell GaAs/AlGaAs hetero‐nanowires |
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| Authors: | Dance Spirkoska Anna Fontcuberta i Morral Joseph Dufouleur Qiushi Xie Gerhard Abstreiter |
| Affiliation: | 1. Walter Schottky Institut and Physik Department, Technische Universit?t München, Am Coulombwall 4, 85748 Garching, Germany;2. Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland;3. Institut for Advanced Study, Technische Universit?t München, 85748 Garching, Germany |
| Abstract: | Modulation doped AlGaAs/GaAs core–shell nanowire structures were grown by molecular beam epitaxy. A Si delta‐doping was introduced in the AlGaAs shell around the {110} facets of the GaAs core. The wires are typically highly resistive at low temperatures. However, they show a pronounced persistent photoconductivity effect indicating activation of free carriers from the delta‐doped shell to the GaAs core. The n‐type character of the channel is demonstrated by applying a back‐gate voltage. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Keywords: | core− shell nanowires doping molecular beam epitaxy GaAs AlGaAs |