Synthesis of cationic N‐[3‐(dimethylamino)propyl]methacrylamide brushes on silicon wafer via surface‐initiated RAFT polymerization |
| |
Authors: | Nergiz Gurbuz Serkan Demirci Serkan Yavuz Tuncer Caykara |
| |
Affiliation: | 1. Department of Chemistry, Faculty of Arts and Sciences, Gazi University, 06500 Besevler, Ankara, Turkey;2. Department of Chemistry, Faculty of Arts and Sciences, Ahi Evran University, 40100 A??k Pa?a, K?r?ehir, Turkey |
| |
Abstract: | ![]() Surface‐initiated reversible addition‐fragmentation chain transfer (SI‐RAFT) polymerization of N‐[3‐(dimethylamino)propyl]methacrylamide (DMAPMA) on the silicon wafer was conducted in attempt to create controllable cationic polymer films. The RAFT agent‐immobilized substrate was prepared by the silanization of hydroxyl groups on silicon wafer with 3‐aminopropylthriethoxysilane (APTS) and by the amide reaction of amine groups of APTS with ester groups of 4‐cyano‐4‐((thiobenzoyl) sulfanyl) pentanoic succinimide ester (CPSE); followed by the RAFT polymerization of DMAPMA using a “free” RAFT agent, that is, 4‐cyanopentanoic acid dithiobenzoate (CPAD) and an initiator, that is, 4,4′‐azobis‐4‐cyanopentanoic acid (CPA). The formation of homogeneous tethered poly(N‐[3‐(dimethylamino)propyl]methacrylamide) [poly(DMAPMA)] brushes, whose thickness can be tuned by reaction time varying, is evidenced by using the combination of grazing angle attenuated total reflectance‐Fourier transform infrared spectroscopy, X‐ray photoelectron spectroscopy, atomic force microscopy, and water contact‐angle measurements. The calculation of grafting parameters from the number‐average molecular weight, M n (g/mol) and ellipsometric thickness, h (nm) values indicated the synthesis of densely grafted poly(DMAPMA) films and allowed us to predict a polymerization time for forming a “brush‐like” conformation for the chains. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011 |
| |
Keywords: | reversible addition‐fragmentation chain transfer (RAFT) stimuli‐sensitive polymers surfaces |
|
|