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Controlled growth of rutile TiO2 by atomic layer deposition on oxidized ruthenium |
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| Authors: | Mihaela Popovici Johan Swerts Kazuyuki Tomida Dunja Radisic Min‐Soo Kim Ben Kaczer Olivier Richard Hugo Bender Annelies Delabie Alain Moussa Christa Vrancken Karl Opsomer Alexis Franquet Malgorzata A. Pawlak Marc Schaekers Laith Altimime Sven Van Elshocht Jorge A. Kittl |
| Affiliation: | imec, Kapeldreef 75, 3001, Leuven, Belgium |
| Abstract: | Crystalline rutile TiO2 films were grown by atomic layer deposition on oxidized Ru electrodes using a titanium methoxide as the metal precursor and O3 as the oxidant. A protective layer of ～0.3 nm TiO2 grown with H2O as the oxidant was first deposited in order to avoid etching of the Ru bottom electrode by the O3 used for the growth of the TiO2 (bulk) layer. Electrical evaluation of the capacitor stacks with TiO2 as dielectric, RuO2/Ru and Pt as the bottom and top electrodes respectively, resulted in superior characteristics of the rutile phase as compared to the anatase. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Keywords: | atomic layer deposition high‐k dielectrics rutile TiO2 |